| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus for enabling excellent substrate treatment by substantially uniformizing a temperature distribution of a treatment solution in a treatment tank . SOLUTION: The temperature of an etching solution is heated to etching temperature and kept unchanged by a heater 53 of a chemical preparing tank 50 and a heater 29 of a treatment tank 20. Further, a nitrogen gas kept at a gas discharge temperature higher than the etching temperature is supplied from a nitrogen gas supply nozzle 12 to the vicinity of an upper part of the treatment tank 20. As a result, it is possible to compensate heat transfer from the etching solution 21 and so keep a temperature distribution at each portion in the etching solution 21 substantially uniformly. Consequently, it is possible to execute excellent etching treatment. COPYRIGHT: (C)2006,JPO&NCIPI
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