DOPING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing device of a semiconductor device having a device for uniformly doping impurity elements by using a large scale substrate where multiple chamfering is realized in mass production. SOLUTION: A cross-section of ion flow is set to be linear or rectangular. The large area substrate is moved to a direction vertical to a longitudinal direction of an ion flow while the large area substrate is kept in a state where it is inclined to ion flow by a prescribed inclination angleθ. An incident angle of an ion beam is controlled by changing the inclination angleθ. Width of the longitudinal direction of ion flow can be made shorter than length of one side of the substrate by making the large area substrate in the inclined state with respect to a horizontal face. COPYRIGHT: (C)2006,JPO&NCIPI