| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that permits the presence of the generation of voids to be checked easily in a short time, and to provide its manufacturing method. SOLUTION: The manufacturing method of a semiconductor device comprises a process of forming a plurality of wiring patterns 1 to 4 on an insulating film; a process of forming an interlayer insulating film on the insulating film and on the plurality of the wiring patterns; a process of depositing a substance layer comprising a different substance (e.g., W) from that of the interlayer insulating film on the interlayer insulating film; a process of measuring the capacitance between adjacent wirings 2, 3 among the plurality of the wiring patterns; and a process of deciding that a void has been formed in at least a part of the interlayer insulating film located between the adjacent wirings, when the foregoing capacitance is smaller than a prescribed value, and of, in contrast, deciding that no void is formed in the interlayer insulating film located between the adjacent sets of wiring, when the capacitance is the predetermined value or larger. COPYRIGHT: (C)2006,JPO&NCIPI
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