METHOD FOR FABRICATING ISOLATION LAYER OF SEMICONDUCTOR DEVICE,申请号KR20030084920-传众专利搜索

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发明名称	METHOD FOR FABRICATING ISOLATION LAYER OF SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100548571(B1)	申请公布日期	2006.02.02
申请号	KR20030084920	申请日期	2003.11.27
申请人		发明人
分类号	H01L21/76;H01L21/762	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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