| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermistor film optimal for an infrared detecting sensor where a transition metal oxide film is used, without causing mechanical damage, such as deformations, cracks or the like to the film. SOLUTION: The thermistor thin film is formed of a composite metal oxide of Mn<SB>3</SB>O<SB>4</SB>-Co<SB>3</SB>O<SB>4</SB>or Mn<SB>3</SB>O<SB>4</SB>-Co<SB>3</SB>O<SB>4</SB>-Fe<SB>2</SB>O<SB>3</SB>, 0.05 to 0.2μm in film thickness, and is composed of crystals containing at least 90% crystal grains having an aspect ratio of 0.5 to less than 2.0. The thermistor thin film is formed through the method, wherein a film of 0.05 to 0.2μm film thickness and formed of Mn<SB>3</SB>O<SB>4</SB>-Co<SB>3</SB>O<SB>4</SB>or Mn<SB>3</SB>O<SB>4</SB>-Co<SB>3</SB>O<SB>4</SB>-Fe<SB>2</SB>O<SB>3</SB>composite metal oxide is formed on an underlying layer of SiO<SB>2</SB>through a sputtering method and is then subjected to a thermal treatment in an atmosphere or a mixed atmosphere of nitrogen and oxygen at a temperature of 550 to 650°C. COPYRIGHT: (C)2006,JPO&NCIPI
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