发明名称 CATHODIC-ARC FILM DEPOSITION METHOD, AND FILM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a cathodic-arc film deposition method capable of depositing a carbon film (ta-C film) having high thin film adhesiveness and consistent film quality. SOLUTION: A substrate stage 42 provided in a film deposition chamber 4 is directed to a bottom part of the film deposition chamber 4 and directed facing an opposing electrode part 49. By applying the high frequency wave to an RF high frequency power supply 48, a film deposition surface 41a of a substrate 41 mounted on the substrate stage 42 is reverse-sputtered. Next, the substrate stage 42 is directed to a plasma beam introducing aperture 4a. Plasma beams B containing carbon ions are generated by colliding a carbon target 11 with the cathodic arc discharge, and the film deposition surface 41a is irradiated with the plasma beams B to deposit a carbon film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006028563(A) 申请公布日期 2006.02.02
申请号 JP20040207019 申请日期 2004.07.14
申请人 SHIMADZU CORP 发明人 SHIMOZATO YOSHIHIRO
分类号 C23C14/02;C23C14/32;C23C26/00 主分类号 C23C14/02
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