| 摘要 |
A method ( 200 ) of forming an isolation structure is disclosed, and includes forming an isolation trench in a semiconductor body ( 214 ) associated with an isolation region, and filling a bottom portion of the isolation trench with an implant masking material ( 216 ). An angled ion implant is performed into the isolation trench ( 218 ) after having the bottom portion thereof filled with the implant masking material, thereby forming a threshold voltage compensation region in the semiconductor body. Subsequently, the isolation trench is filled with a dielectric material ( 220 ).
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