<p>A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.</p>
申请公布号
WO2006011664(A1)
申请公布日期
2006.02.02
申请号
WO2005JP14253
申请日期
2005.07.28
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SUGIYAMA, EIJI;TAMURA, TOMOKO;DOZEN, YOSHITAKA;DAIRIKI, KOJI;TSURUME, TAKUYA