发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.</p>
申请公布号 WO2006011664(A1) 申请公布日期 2006.02.02
申请号 WO2005JP14253 申请日期 2005.07.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SUGIYAMA, EIJI;TAMURA, TOMOKO;DOZEN, YOSHITAKA;DAIRIKI, KOJI;TSURUME, TAKUYA 发明人 SUGIYAMA, EIJI;TAMURA, TOMOKO;DOZEN, YOSHITAKA;DAIRIKI, KOJI;TSURUME, TAKUYA
分类号 H01L21/02;H01L27/12 主分类号 H01L21/02
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