| 摘要 |
PROBLEM TO BE SOLVED: To provide a bit line driving circuit and driving method for an integrated circuit memory device improving a precharge and sense amplification scheme. SOLUTION: In a bit line driving circuit for an integrated circuit memory device, an auxiliary circuit is utilized to utilize a new scheme for precharging a bit line higher or lower than VCCA/2 in order to increase voltage between a gate and a source of a transistor comprising a sense amplifier circuit. Furthermore, a voltage difference after sharing a charge in a bit line for cell data "1" and "0" can be maintained constant by a dummy cell. A threshold voltage offset of a transistor provided in the sense amplifier circuit can be then removed by the sense amplifier circuit under control of an offset control circuit and in such a case, the auxiliary circuit is utilized to stabilize the voltage difference after sharing the charge on the bit line. COPYRIGHT: (C)2006,JPO&NCIPI
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