| 摘要 |
PROBLEM TO BE SOLVED: To enhance measuring precision for an electric characteristic test, without bringing two contacts into contact with chip electrodes of a semiconductor device. SOLUTION: An insulating substrate 5 of this substrate 3 for a test is formed, on one surface thereof, with four substrate electrodes 7 formed corresponding to the chip electrodes 1a of a wafer level CSP 1, four sets of wiring patterns 9a, 9b formed successively in the substrate electrodes 7 and provided in every of the substrate electrodes 7, and terminals 11 formed successively in a side end opposite to the substrate electrodes of the wiring patterns 9a, 9b in every of the wiring patterns 9a, 9b. An insulation film 13 for coating the wiring patterns 9a, 9b, and having opening parts on the substrate electrodes 7 and in areas in the vicinity of the terminals 11 is formed on the one surface 5a of the insulating substrate 5. In the wafer level CSP 1, the chip electrodes 1a are joined to the substrate electrodes 7 with solder to be mounted on the substrate 3 for the test. The wiring patterns 9a, 9b connected to the respective substrate electrodes 7 are connected to a testing device via the terminals 11 to be used as a sensing line and a force line. COPYRIGHT: (C)2006,JPO&NCIPI
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