| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-contained semiconductor device, in which a proper interface is formed between a gate insulating film and a semiconductor layer for less gate leakage current. SOLUTION: The nitride-contained semiconductor device comprises a non-doped first aluminum nitride gallium (Al<SB>x</SB>Ga<SB>1-x</SB>N(0≤x≤1)) layer formed as a channel layer, a non-doped or n-type aluminum nitride gallium (Al<SB>y</SB>Ga<SB>1-y</SB>N(0≤y≤1, x<y)) layer formed as a barrier layer on the first aluminum nitride gallium layer, an aluminum nitride (AlN) film formed as a gate insulating film layer on the second aluminum nitride gallium layer, an aluminum oxide (Al<SB>2</SB>O<SB>3</SB>) film formed as a gate insulating film upper layer on the aluminum nitride film, a source electrode and drain electrode formed as first and second main electrodes to be electrically connected to the second aluminum nitride gallium layer, and a gate electrode formed as a control electrode on the aluminum oxide film. COPYRIGHT: (C)2006,JPO&NCIPI |
