SOLID-STATE IMAGE PICKUP DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To manufacture a solid state image pickup device with high quality which has a structure containing a nitride film in a gate insulating film. SOLUTION: A vertical transfer channel and a read-out gate are formed mutually adjacently by adding impurities to a semiconductor substrate. On the semiconductor substrate surface of a region including those upper parts, a first silicon oxide film is formed and a silicon nitride film is formed on its surface. A resist pattern is formed on the silicon nitride film. The resist is removed after carrying out isotropic etching of the silicon nitride film by using the resist pattern as a mask. In a region including the etched silicon nitride film surface, a second silicon oxide film is formed so that an insulating film containing silicon oxide and silicon nitride may be formed. A vertical transfer electrode is formed above the vertical transfer channel. With a different side from a vertical transfer channel, a photoelectric transducer which adjoins the read-out gate is formed by adding impurities to the semiconductor substrate. Isotropic etching is performed so that a silicon nitride film may be formed so as to cover over the vertical transfer channel and it may overhang over the read-out gate. COPYRIGHT: (C)2006,JPO&NCIPI