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发明名称
Method for forming MOS transistor
摘要
申请公布号
KR100548572(B1)
申请公布日期
2006.02.02
申请号
KR20030091450
申请日期
2003.12.15
申请人
发明人
分类号
H01L21/283;H01L21/336;H01L21/60;H01L29/417
主分类号
H01L21/283
代理机构
代理人
主权项
地址
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