| 摘要 |
<p>On the main body, comprising material of first conductivity type designed to detect radiation, second structured semiconductor layers of the same and/or a second conductivity type, are deposited by epitaxy. One or more of the further semiconductor layers are deposited epitaxially on one or more main surfaces of all semiconductor layers on both main surfaces. One epi-layer is deposited and structured. Several epi-layers of differing types of conductivity and/or differing dopants are deposited in sequence in a single deposition process, and are then structured. Epi-layers of first and second conductivity types and differing doping are optionally deposited over one another. Epi-layers are also used to contact radiation detectors, of or as electronic components and especially as active and/or active electronic components and/or as conductive tracks. Active components are e.g. diodes, MOSFETs, JFETs and bipolar transistors. The passive components are resistors and capacitances. A thin epi-layer is used as a radiation entry window. pn-detectors, strip detectors, semiconductor radiation detectors, pixel detectors and CCDs are manufactured. Further widely-ranging semiconductor-related concepts are invoked. An independent claim is included for the corresponding semiconductor radiation detector.</p> |
