发明名称 Electrode structure of a carrier substrate of a semiconductor device
摘要 <p>It is an object to provide an electrode structure of a carrier substrate of a semiconductor device in which the strength and the reliability of the joint portion between an electrode of a semiconductor package and an electrode of a main substrate are improved. A soldering land (103) that is an electrode of a carrier substrate (102) is hemispheric having a concentric hemispheric face hollow portion thereinside, a flange portion is provided in the circumferential portion thereof, and the outer diameter of the flange portion corresponds to the outer diameter of the conventional cylinder. Two slits (104) are provided in the flange portion and parts of a wall surface adjacent to the flange portion for venting air. A hemispheric face recess is provided in the carrier substrate (102) toward an outer surface, and the soldering land (103) is fixedly attached to the carrier substrate (102) so that the soldering land (103) is fitted into the recess and the flange portion abuts the outer surface of the carrier substrate.</p>
申请公布号 HK1042592(A1) 申请公布日期 2006.01.27
申请号 HK20020104302 申请日期 2002.06.06
申请人 NEC CORPORATION 发明人 MANABU MIZUSAKI
分类号 H01L21/60;H01L23/12;H01L23/485;H05K3/34;(IPC1-7):H01L 主分类号 H01L21/60
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