发明名称 Processing multilayer semiconductors with multiple heat sources
摘要 A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.
申请公布号 US2006018639(A1) 申请公布日期 2006.01.26
申请号 US20050187188 申请日期 2005.07.22
申请人 RAMAMURTHY SUNDAR;HEGEDUS ANDREAS G;THAKUR RANDHIR 发明人 RAMAMURTHY SUNDAR;HEGEDUS ANDREAS G.;THAKUR RANDHIR
分类号 A21B2/00;H01L21/00 主分类号 A21B2/00
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