Method and system for dopant containment

摘要

According to one embodiment, a semiconductor device is provided. The semiconductor device includes an oxide layer. The semiconductor device also includes a silicon layer disposed outwardly from the oxide layer and having at least one region comprising a dopant. The semiconductor device also includes a dielectric layer disposed outwardly from the silicon layer. The semiconductor device also includes a gate disposed outwardly from the dielectric layer. The semiconductor device also includes a blocking layer disposed between the oxide layer and the silicon layer. The blocking layer is operable to at least partially block a transfer of the dopant from the at least one region of the silicon layer to the oxide layer.