| 摘要 |
<P>PROBLEM TO BE SOLVED: To introduce a large amount of nitrogen to the internal wall oxide film inside a trench, while suppressing deterioration in the reliability of a semiconductor device. <P>SOLUTION: The internal wall oxide film 3 is formed by oxidizing the internal wall of the trench 2 formed in the element isolation region of a silicon substrate 1. Two nitriding processing of thermal nitriding and radical nitriding are performed on the internal wall oxide film 3. A first nitride layer 3a is formed in the vicinity of an interface between the internal wall oxide film 3 and the silicon substrate 1 with the thermal nitriding, and a second nitride layer 3b is formed on the surface of the internal wall oxide film 3 with the radical nitriding process. In the thermal nitriding treatment, the amount of nitrogen to be introduced is suppressed, to the extent that the reliability of the semiconductor device formed in an active region will not deteriorate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
