| 摘要 |
A field plate trench transistor ( 20 - 60 ) has a semiconductor body ( 3 ) which contains a plurality of trenches ( 9 ) which are isolated from one another by mesa regions. The trenches ( 9 ) contain gate electrodes ( 11 ) for controlling a vertical flow of current through the semiconductor body ( 3 ). At least one portion of the gate electrodes ( 11 ) are at source potential.
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