发明名称 |
Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same |
摘要 |
Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor. The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.
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申请公布号 |
US6989598(B2) |
申请公布日期 |
2006.01.24 |
申请号 |
US20040801823 |
申请日期 |
2004.03.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KWANGJU INST SCI & TECH |
发明人 |
SONG JUNE-O;LEEM DONG-SUK;SEONG TAE-YEON |
分类号 |
H01L21/28;H01L29/40;H01L21/285;H01L33/30;H01L33/32;H01L33/40;H01S5/042;H01S5/30;H01S5/323 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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