发明名称 |
Ion implantation to modulate amorphous carbon stress |
摘要 |
A method of manufacturing an integrated circuit includes providing a layer of polysilicon material above a semiconductor substrate. A layer of amorphous carbon is provided above the layer of polysilicon material and inert ions are implanted into the amorphous carbon layer. The layer of amorphous carbon is patterned to form an amorphous carbon mask, and a feature is formed in the layer of polysilicon according to the amorphous carbon mask.
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申请公布号 |
US6989332(B1) |
申请公布日期 |
2006.01.24 |
申请号 |
US20020217730 |
申请日期 |
2002.08.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BELL SCOTT A.;DAKSHINA-MURTHY SRIKANTESWARA;LYONS CHRISTOPHER F. |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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