| 摘要 |
A method of operating a memory circuit to reduce standby current is disclosed. The method includes applying a first voltage (Vdd) to a power terminal ( 224 ) of a memory cell having a first ( 612 ) and a second ( 614 ) data terminal. A data bit is stored in a memory cell ( 600,602,604,606 ). A second voltage (VDA) different from the first voltage is applied to the power terminal. A third voltage (Ground) is applied to the first and second data terminals. The first voltage is applied to the power terminal.
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