发明名称 SUBSTRATE INCORPORATING SEMICONDUCTOR IC
摘要 <P>PROBLEM TO BE SOLVED: To enhance adhesion between a semiconductor IC incorporated in a substrate and a member adjacent thereto. <P>SOLUTION: The substrate incorporating a semiconductor IC comprises a multilayer substrate 10 composed of resin layers 11-13, and the semiconductor IC 130 buried in the multilayer substrate 10 wherein the surface roughness (Ra) of the semiconductor IC 130 is set at 1 &mu;m or larger on the rear surface thereof. Since the rear surface of the semiconductor IC 130 is roughened, adhesion is enhanced sharply between the semiconductor IC 130 and a member in contact therewith. Furthermore, the overall thickness of the substrate incorporating the semiconductor IC can be reduced sharply by employing the semiconductor IC which is made thin by polishing. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006019341(A) 申请公布日期 2006.01.19
申请号 JP20040193055 申请日期 2004.06.30
申请人 TDK CORP 发明人 KATSUMATA MASASHI;ENDO TOSHIICHI;ABE TOSHIYUKI;KAWABATA KENICHI
分类号 H05K3/46;H01L23/12;H05K9/00 主分类号 H05K3/46
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