| 摘要 |
A method for manufacturing semiconductor device is disclosed which enables to perform ion implantation at high temperature wherein ions are accelerated by high energy. The method enables to simply perform selective and sufficiently deep impurity implantation into a semiconductor substrate (1, 101), especially into an SiC semiconductor substrate. The method for manufacturing device is characterized by comprising a step for forming a mask layer on a surface of the semiconductor substrate (1, 101) which mask layer is composed of a polyimide resin film (2) or of an SiO2 film (107a, 107b) and a metal thin film (105), and a step for implanting impurity ions.
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