发明名称 |
Method of forming dielectric layer using plasma enhanced atomic layer deposition technique |
摘要 |
A method of forming a dielectric layer using a plasma enhanced atomic layer deposition technique includes: loading a semiconductor substrate having a three-dimensional structure into a reaction chamber; and repeatedly performing the following steps until a dielectric layer with a desired thickness is formed: supplying a source gas into the reaction chamber; stopping the supply of the source gas and purging the source gas remaining inside the reaction chamber; and supplying oxygen gas into the reaction chamber after purging the source gas, and applying RF power for oxygen plasma treatment, a level of the applied RF power and a partial pressure of the oxygen gas being increased concurrently with an increased aspect ratio of the three-dimensional structure.
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申请公布号 |
US2006014398(A1) |
申请公布日期 |
2006.01.19 |
申请号 |
US20050149498 |
申请日期 |
2005.06.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG MIN-WOO;WON SEOK-JUN;JEONG YONG-KUK;KWON DAE-JIN;KIM WEON-HONG |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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