发明名称 CLEANING PROCESS FOR SEMICONDUCTOR SUBSTRATES
摘要 The present invention relates to cleaning processes for semiconductor substrates. More particularly, the present inventive method can provide enhanced particle removal efficiencies at a given material loss. In fact, in certain embodiments, the present method can achieve particle removal efficiencies of at least about 90%, while yet removing less than about 2 angstroms of any oxide present on the semiconductor substrate. As such, the present methods find particular applicability in the processing of advanced technology nodes.
申请公布号 WO2006007453(A1) 申请公布日期 2006.01.19
申请号 WO2005US21712 申请日期 2005.06.20
申请人 FSI INTERNATIONAL, INC.;LEE, NAM, PYO;CLARK, PHILIP;SCHWAB, BRENT, D. 发明人 LEE, NAM, PYO;CLARK, PHILIP;SCHWAB, BRENT, D.
分类号 (IPC1-7):H01L21/306;B08B3/00 主分类号 (IPC1-7):H01L21/306
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