摘要 |
The present invention relates to cleaning processes for semiconductor substrates. More particularly, the present inventive method can provide enhanced particle removal efficiencies at a given material loss. In fact, in certain embodiments, the present method can achieve particle removal efficiencies of at least about 90%, while yet removing less than about 2 angstroms of any oxide present on the semiconductor substrate. As such, the present methods find particular applicability in the processing of advanced technology nodes. |
申请人 |
FSI INTERNATIONAL, INC.;LEE, NAM, PYO;CLARK, PHILIP;SCHWAB, BRENT, D. |
发明人 |
LEE, NAM, PYO;CLARK, PHILIP;SCHWAB, BRENT, D. |