| 摘要 |
PROBLEM TO BE SOLVED: To enable the formation of a high resistance element without increasing a process number while preventing the formation of a silicide film in a high resistance element structurally even in salicide process, by forming a high resistance element using an impurity diffused layer in a semiconductor substrate. SOLUTION: A polysilicon wiring layer 12 is formed in the element region on a silicon substrate 11a via a gate insulating layer 12a. The resistance of the polysilicon wiring layer 12 is adjusted by diffusing impurities from the surface of the polysilicon wiring layer 12. At the same time, in the element region on the silicon substrate 11a by using the polysilicon wiring layer 12 as a mask, the region adjacent to the polysilicon wiring layer 12 is made to diffuse impurities, so that an n-type impurity layer 11c may be formed so as to use it as a high resistance element. The insulating layer consisting of a SiN film 14 on this high resistance element 11c, namely, an n-type impurity layer, is arranged. Besides, after performing the salicide process from the surface top, it is obtained by forming a silicide film 17 on the polysilicon wiring layer 12. COPYRIGHT: (C)2006,JPO&NCIPI
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