| 发明名称 |
Production process for an electrically functional layer structure for semiconductor technology forms and applies mask by gravure process and structures a material layer |
| 摘要 |
<p>A production process for an electrically functional layer structure comprises forming such a layer (30,30') to cover a substrate (20) and using a mask (40') to cover part of the layer and selectively removing material from unmasked regions. The mask is brought to the upper surface of the material by a gravure process.</p> |
| 申请公布号 |
DE102004031719(A1) |
申请公布日期 |
2006.01.19 |
| 申请号 |
DE20041031719 |
申请日期 |
2004.06.30 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HALIK, MARCUS;BRAUN, STEFAN;KLAUK, HAGEN;ZSCHIESCHANG, UTE;SCHMID, GUENTER |
| 分类号 |
B41C1/00;H01L51/40 |
主分类号 |
B41C1/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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