METHOD OF FORMING A GATE IN A FLASH MEMORY DEVICE,申请号KR20040055274-传众专利搜索

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发明名称	METHOD OF FORMING A GATE IN A FLASH MEMORY DEVICE
摘要
申请公布号	KR20060006333(A)	申请公布日期	2006.01.19
申请号	KR20040055274	申请日期	2004.07.15
申请人	HYNIX SEMICONDUCTOR INC.	发明人	JANG, MIN SIK
分类号	H01L21/8247	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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