发明名称 METHOD AND SYSTEM FOR PROCESSING SUBSTRATE
摘要 PURPOSE: A method and system for processing substrate are provided to secure interface uniformity in the film thickness of an application film, even if the application processing of a wafer is performed by using the application liquid of high viscosity by the point which is the so-called 'one- stroke' writing. CONSTITUTION: A method and system for processing substrate comprises coating a coating solution on a surface of the substrate(w) while relatively moving a coating solution discharge nozzle and the substrate and discharging the coating solution onto the substrate from the coating solution discharge nozzle, exposing the substrate to a solvent atmosphere of the coating solution after the step of coating, and reducing pressure inside a container in which the substrate is housed after the step of exposing.
申请公布号 KR20020081117(A) 申请公布日期 2002.10.26
申请号 KR20020020703 申请日期 2002.04.16
申请人 TOKYO ELECTRON LIMITED 发明人 FUKUTOMI AKIRA;HIRAKAWA NAOYA;ISHIZAKA NOBUKAZU;KITANO TAKAHIRO;KOBAYASHI SHINJI;SUGIMOTO SHINICHI
分类号 H01L21/027;B05D3/04;G03F7/16;H01L21/00;(IPC1-7):H01L21/027 主分类号 H01L21/027
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