| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having large capacitance ratio of a memory cell in which a control gate is surely formed between floating gates. SOLUTION: The semiconductor device comprises a plurality of memory cells arranged in first direction and second direction which is vertical to the first one. Each memory cell comprises a first insulating film 102 formed on a semiconductor substrate 101, a floating gate 103 formed on the first insulating film, a second insulating film 109 consisting of a first part formed on the upper surface of the floating gate and a second part formed on the side surface parallel to the first direction of the floating gate, and a control gate 110 which covers the first and second parts of the second insulating film. The width in the second direction of the floating gate increases as it advances from the lower part toward the upper part, and the width in the second direction of the second part of the second insulating film decreases as it advances from the bottom part toward the upper part. COPYRIGHT: (C)2006,JPO&NCIPI
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