SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress a semiconductor device from being broken down in a transient timing when a load connected to the semiconductor device is short-circuited. SOLUTION: This IGBT(Insulated Gate Bipolar Transistor) is provided with an insulating region 42 formed so as to be positioned with a predetermined distance from a gate insulating film 34 in an n--type drift region 24 existing in a clearance between trench gate electrodes 32. This predetermined distance is characterized by being present outside a range where electrons substantially exist in a normal ON-status, and by being present within the range where electrons substantially exist when a load is short-circuited. COPYRIGHT: (C)2006,JPO&NCIPI