| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure system which is capable of forming resist patterns each having an identical line width with each of a plurality of photomasks used to manufacture semiconductor devices that are classified into the same product group and conform to the same design rule. <P>SOLUTION: The exposure system comprises an observation unit 332 which performs measurement to obtain an actual value of a reference mask line width common to a first mask and to a second mask used to manufacture a semiconductor device classified into the same product group and conforming to the same design rule as the first mask, a lithography forecasting section 325 which changes the reference mask line width into a first line width and into a second line width and calculates a first transmittance characteristic given by the first line width and a second transmittance characteristic given by the second line width, respectively, and an exposure unit 3 which exposes a first resist to light projection through the first mask at a first preset exposure to form a first resist pattern, and exposes a second resist to light projection through a second mask at a second exposure, which is calculated on the basis of the actual measurement of the reference mask line width, a value given by dividing the second transmittance characteristic with the first transmittance characteristic, and of the first preset exposure, to form a second resist pattern having the same resist line width as the first resist pattern. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
