METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a TFT or the like wherein an LDD structure can be formed by dopant implantation process of one time. SOLUTION: A process is contained wherein a gate electrode 20 having a slope in which film thickness becomes large gradually from an end in a channel lengthwise direction toward a central part is formed on a gate insulating film. Implantation of dopant element such as Phosphorus is performed by using the gate electrode 20 as a mask, a heavily doped n+-type region 22a as a source/drain region, a lightly doped n--type region 22b and a channel region 24 which are shown in Fig. (B) are formed finally. COPYRIGHT: (C)2006,JPO&NCIPI