| 摘要 |
The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of In<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N (0<x<1, 0<=y<=0.2), wherein a threshold mode gain of each of the at least quantum well is not more than 12 cm<SUP>-1</SUP>, and wherein a standard deviation of a microscopic fluctuation in a band gap energy of the at least luminescent layer is in the range of 75 meV to 200 meV.
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