| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a through electrode with a small area and high density in a semiconductor device having the through electrode. <P>SOLUTION: In the semiconductor device 100, a multiple through plug 111 filled into a hole through a silicon substrate 101 is provided. The multiple through plug 111 comprises a first solid columnar through electrode 103; a first insulating film 105 for covering the cylindrical surface of the first through electrode 103; a second through electrode 107 for covering the cylindrical surface of the first insulating film 105; and a second insulating film 109 for covering the cylindrical surface of the second through electrode 107, and they have the same center axes. And the upper sections of the first insulating film 105, the second through electrode 107, and the second insulating film 109 are set to be in a toroidal shape. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
