| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning solution and a method for cleaning Si-including substrates that can efficiently remove impurities, particles and organic substances sticking on the surfaces of the substrates as the roughening of the surface of inexpensive Si-including substrates is suppressed. SOLUTION: The cleaning solution for substrates is a mixture of amino alcohol, phosphonic acid and hydrogen peroxide. The concentration of the amino alcohol is preferably 0.01 to 0.5 %, the phosphonic acid is 0.01 to 0.5 %, and the hydrogen peroxide is 0.1 to 5.0 %. COPYRIGHT: (C)2006,JPO&NCIPI
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