| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for a semiconductor optical element proper for manufacturing the optical element having a structure being capable of preventing the diffusion of zinc from a contact layer into a p-type clad layer without the need for the lowering of the growth temperature of the contact layer and having a higher output. SOLUTION: In the epitaxial wafer for the semiconductor optical element; a light-emitting section composed of the double-hetero structure of an n-type clad layer 4, an active layer 6, and the p-type clad layer 7 is formed on a substrate 1 while the contact layer 10 is formed on the light-emitting section, and zinc is used for the contact layer 10 as a p-type dopant and magnesium for p-type layers other than that as the dopant. In such an epitaxial wafer for the semiconductor optical element, a zinc-diffusion inhibiting layer 8 composed of a distortion compensation type super lattice obtained by alternately laminating a plurality of thin layers having a compression type distortion and the thin layers having a tensile type distortion is formed in the p-type clad layer 7. COPYRIGHT: (C)2006,JPO&NCIPI
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