METHOD OF FORMING FERROELECTRIC FILM

摘要

PROBLEM TO BE SOLVED: To obtain a method of forming a ferroelectric film, which improves level difference coverage property. SOLUTION: The method of forming the ferroelectric film which is an insulating metal oxide on the front surface of an electrode having a recess or a projection or being formed in the shape of a projection determines the temperature of a substrate and the pressure of a chamber which are conditions for the growth of the ferroelectric film such that the level difference coverage rate of the ferroelectric film in the electrode becomes equal to or more than a predetermined level difference coverage rate. The method adjusts the composition ratio of a metallic element constituting an A site in the ferroelectric film by changing the compound mixture of a plurality of kinds of source gases each containing an organic metal compound to be introduced in the chamber in the determined temperature of the substrate and the determined pressure of the chamber. Then, the method determines the composition ratio of the ferroelectric film by adjusting the composition ratio of a metallic element constituting a B site in the ferroelectric film by changing the mixture ratio of second material gas composed of a plurality of kinds of source gases each containing the organic metal compound to be introduced in the chamber under condition in which the composition ratio of the metallic element constituting the A site is set to be constant. The method deposits the ferroelectric film on the front surface of the electrode on the basis of the determined condition for growth and the determined composition ratio. COPYRIGHT: (C)2006,JPO&NCIPI