METHOD FOR MANUFACTURING THIN FILM PHOTOELECTRIC CONVERTER

摘要

A method for manufacturing a p-type layer of a silicon thin film photoelectric converter which suppresses reduction of a transparent conductive oxide layer and has excellent performance. The method for manufacturing the silicon thin film photoelectric converter is provided to manufacture a photoelectric converter wherein a transparent conductive oxide layer, a p-type semiconductor layer, a substantially intrinsic semiconductor photoelectric converting layer and an n-type semiconductor layer are arranged in this order when viewed from a light entering side. The p-type layer is formed by a plasma CVD method using a diluted gas including at least a silane gas and hydrogen, at a pressure within a range of 2Torr or more but not more than 5Torr, and with a flow ratio of the diluted gas to the silane gas 5 times or more but not more than 50 times.