| 摘要 |
There is provided a method for manufacturing an aluminum nitride single crystal, the method including the steps of: preparing a raw material composition containing: aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating; heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride; and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal. The method is capable of obtaining an aluminum nitride single crystal which is sufficiently large for practical use at low cost in a short time and has high productivity and wide usability.
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