A THIN FILM TRANSISTOR, METHOD OF PRODUCING SAME AND ACTIVE MATRIX DISPLAY

摘要

A thin film transistor (10) for use in, for example, an active matrix LCD display device, comprising an electrode layer structure (12,13), formed by a gate line (12) and a gate electrode (13), that is deposited on a substrate (14) with a dielectric layer (16) disposed thereover, and a layer (18) of high-mobility semiconductor material in this case, in the form of a line provided with a lateral protrusion (18a) disposed on the dielectric layer (16) in alignment with and facing the electrode structure comprising the gate line (12) and the gate electrode (13). The proposed structure has the advantage that the semiconductor line (18) can be deposited by, for example, an inkjet printing process or by a patterned electrostatic aerosol deposition process. The semiconductor material may be organic.