| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection type mask blanks and a reflection type mask capable of suppressing the formation of the diffusion layer of the uppermost layer of a multilayer reflection film and an Ru (ruthenium) protective film by heat treatment or the like upon or after depositing the Ru protective film, and of preventing the deterioration of reflection factor. <P>SOLUTION: The reflection type mask blanks 10 comprises a substrate 1, a multilayer reflection film 2 for reflecting exposure light, a protective film 6 on the multilayer reflection film 2, a buffer layer 3 and an absorbing body film 4 for absorbing the exposure light which are formed on the substrate sequentially. The protective film 6 is substantially constituted of ruthenium, and the surface of uppermost layer of the multilayer reflection film 2 is processed through hydrogen terminating treatment or a hydrogenated amorphous film is formed between the multilayer reflection film 2 and the protective film 6. The reflection type mask 20 is provided with a transfer pattern 4a formed on the absorbing body film 4 of the reflection type mask blanks 10. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
