MEMORY GAIN CELL, MEMORY CIRCUIT, AND METHOD OF FORMING STRUCTURE FOR GAIN CELL (HORIZONTAL MEMORY GAIN CELL)

摘要

PROBLEM TO BE SOLVED: To provide a gain cell for a memory circuit, a memory circuit comprising multiple gain cells, and a method of producing such gain cells and memory circuits. SOLUTION: A memory gain cell 64 includes a storage capacitor 38, a write device which is electrically coupled to the storage capacitor for charging and discharging the storage capacitor, and a read device. The read device includes one or more semiconducting carbon nanotubes 50 each of which is electrically coupled between a source and a drain. A portion of each semiconducting carbon nanotube is gated by a read gate 60 and the storage capacitor, thereby regulating a current flowing through each semiconducting carbon nanotube from the source to the drain. The current is proportional to the electrical charge stored by the storage capacitor. COPYRIGHT: (C)2006,JPO&NCIPI