发明名称 |
NANOELECTONIC DEVICES BASED ON NANOWIRE NETWORKS |
摘要 |
Semiconductor devices (10) where networks of molecular nanowires (18) or nanofibers are used as the semiconductor material. Field effect transistors are disclosed where networks of molecular nanowires (18) are used to provide the electrical connection between the source (12) and drain (14) electrodes. The molecular nanowires have diameters of less than 500 nm and aspect ratios of at least 10. The molecular nanowires that are used to form the networks can be single element nanowires, Group III-V nanowires, Group II-VI nanowires, metal oxide nanowires, metal chalcogenide nanowires, ternary chalcogenide nanowires and conducting polymer nanowires. |
申请公布号 |
WO2005023700(A3) |
申请公布日期 |
2006.01.12 |
申请号 |
WO2004US28633 |
申请日期 |
2004.09.01 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;KANER, RICHARD, B.;HUANG, JIAXING;GRUNER, GEORGE |
发明人 |
KANER, RICHARD, B.;HUANG, JIAXING;GRUNER, GEORGE |
分类号 |
B82B;H01L29/06;H01L29/20;H01L29/22;H01L29/24;H01L29/786;H01L51/00;H01L51/05 |
主分类号 |
B82B |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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