| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a III-V compound semiconductor of a thin layer, by which a flat structure of a regrowth surface is rapidly obtained in regrowth for fabricating a burying structure. <P>SOLUTION: The III-V compound semiconductor includes a pattern on a layer consisting of a first III-V compound semiconductor and a layer consisting of a second III-V compound semiconductor on the first III-V compound semiconductor and the pattern, wherein the first semiconductor is expressed by a general formula of In<SB>u</SB>Ga<SB>v</SB>Al<SB>w</SB>N (0≤u≤1, 0≤v≤1, 0≤w≤1, u+v+w=1), the pattern consists of an insulating material or a metal material which is stable even in a growth condition of the second III-V compound semiconductor, and the second semiconductor is expressed by a general formula of In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (0≤x≤1, 0≤y≤1, 0≤z≤1, x+y+z=1). In the III-V compound semiconductor, the insulating material or the metal material is one of SiO<SB>2</SB>, SiN<SB>x</SB>and tungsten, the pattern is a line pattern which is almost parallel to a [1-100] direction of the first III-V compound semiconductor, and a width of the line pattern is 1 μm or less. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
