发明名称 |
Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure |
摘要 |
Some methods that are provided form a composite dielectric structure on a substrate. A first dielectric layer that includes metal and oxygen is formed on a substrate. A preliminary dielectric layer that includes silicon is formed on the first dielectric layer. A plasma nitriding treatment is performed on the preliminary dielectric layer to change it into a second dielectric layer. The composite dielectric structure includes the second dielectric layer and the first dielectric layer. Other methods form a semiconductor device that includes the composite dielectric structure.
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申请公布号 |
US2006009043(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
US20050176715 |
申请日期 |
2005.07.07 |
申请人 |
CHO HAG-JU;SHIN YU-GYUN |
发明人 |
CHO HAG-JU;SHIN YU-GYUN |
分类号 |
H01L21/336;H01L21/469;H01L21/02;H01L21/28;H01L21/31;H01L21/314;H01L21/8242;H01L21/8246;H01L27/108;H01L27/115;H01L29/51 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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