| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element which assures lower forward voltage and has excellent light emitting efficiency by utilizing a Ge-doped n-type group III nitride semiconductor layer having a lower resistance and ensures excellent flatness. <P>SOLUTION: The group III nitride semiconductor light emitting element includes a light emitting layer which is bonded with a crystal layer formed of an n-type or p-type group III nitride semiconductor. The n-type group III nitride semiconductor layer is provided in which germanium (Ge) is added and resistivity is 1×10<SP>-1</SP>to 1×10<SP>-3</SP>Ωcm. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
