| 摘要 |
<p>A semiconductor device comprising a ferroelectric capacitor (42) formed on a semiconductor substrate (10) and having a lower electrode (36), a ferroelectric film (38) formed on the lower electrode (36), and an upper electrode (40) formed on the ferroelectric film (38), a silicon oxide film (60) formed on the semiconductor substrate (10) and the ferroelectric capacitor (42) and having a planarized surface, a planar barrier film (62) formed on the silicon oxide film (60) via a silicon oxide film (61) and preventing diffusion of hydrogen or moisture, a silicon oxide film (74) formed on the barrier film (62) and having a planarized surface, and a planar barrier film (78) formed on the silicon oxide film (74) via a silicon oxide film (76) and preventing diffusion of hydrogen or moisture.</p> |
