| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a storage electrode having a low contact resistance and an excellently roughened surface. <P>SOLUTION: First and second amorphous silicon layers 2 and 3 having different impurity concentrations are laminated, a third amorphous silicon layer 4 is formed on the side wall of the laminated structure, and an HSG silicon film 5 is formed on the surfaces of the second and third amorphous silicon layers 3 and 4, thus constituting the storage electrode 1. In each layer, the impurity concentration is formed by satisfying the relationship of the second amorphous silicon layer 3≤the third amorphous silicon layer 4<the first amorphous silicon layer 2. The resistance is lowered by bringing the first amorphous silicon layer 2 having the highest impurity concentration into contact with a substrate 8, the HSG silicon film 5 is formed on the surfaces of the second and third amorphous silicon layers 3 and 4 having the lower impurity concentrations, and the surface is roughened. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
